NE97733

更新时间： 2024-10-01 22:29:07

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管
页数	文件大小	规格书
5页	49K
描述
PNP SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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技术参数
数据手册

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NE97733 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, 33, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.05 A	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	8500 MHz
Base Number Matches：	1

NE97733 数据手册

PNP SILICON HIGH

FREQUENCY TRANSISTOR

NE97733

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 8.5 GHz TYP

• HIGH SPEED SWITCHING CHARACTERISTICS

• NPN COMPLIMENT AVAILABLE: NE68133

• HIGH INSERTION POWER GAIN:

|S^21E| = 12 dB at 1 GHz

33 (SOT 23 STYLE)

DESCRIPTION

The NE97733 PNP silicon transistor is designed for

ultrahigh speed current mode switching applications and

microwave amplifiers up to 3.5 GHz. The NE97733 offers

excellent performance and reliability at low cost.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE97733

2SA1977

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth Product at VCE = -8 V, IC = -20 mA

GHz

6.0

8.5

|S21E|²

hFE

Noise Figureat VCE = -8 V, IC = -3 mA

1.5

12.0

3.0

Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz

Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA

Collector Cutoff Current at VCB = -10 V, IE = 0

Emitter Cutoff Current at VBE = -1 V, IC = 0

Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz

Total Power Dissipation

8.0

100

-0.1

0.1

ICBO

IEBO

µA

CRE

0.5

200

Notes:

1. Electronic Industrial Association of Japan.

2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4 5

中文翻译

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