Datasheet > NE960R575_01

NE960R575_01

更新时间： 2024-10-02 03:32:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
3页	29K
描述
0.5W X, Ku-BAND POWER GaAs FET

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NE960R575_01 数据手册

0.5W X, Ku-BAND POWER GaAs FET

NE960R575

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB

• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz

• HIGH EFFICIENCY: 30% TYP @ 14.5 GHz

• HIGH RELIABILITY

PACKAGE OUTLINE 75

+0.15

-0.05

2 PLACES

GATE

φ 1.8

0.5 ± 0.1

SOURCE

• CLASS A OPERATION

2.7

2.3

3.0 MIN BOTH

LEADS

DRAIN

2.7 TYP

7.0

9.8 MAX

+0.06

0.1

-0.02

DESCRIPTION

2.3

1.13

0.9 MAX

The NE950R575 Power GaAs FET covers the 4 GHz to 18

GHz frequency range for commercial amplifiers and oscillator

applications.

The device incorporates WSi (tungsten silicide) gate and sili-

con dioxide glassivation. NEC's strigent quality assurance

and test procedures assure the highest reliability and perfor-

mance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE950R575

PACKAGE OUTLINE

TYP

9.0

SYMBOLS

CHARACTERISTICS

Linear Gain

UNITS

MIN

MAX

TEST CONDITIONS

VDS = 9 V

8.0

IDS = 180 mA set

f = 14.5 GHz, Rg = 1KΩ

P1dB

Output Power (1 dB)

dBm

27.5

26.5

POUT

ηADD

RTH

Power Out at Fixed Input Power

Power Added Efficiency

Thermal Resistance

25.5

PIN = 19 dBm¹

POUT = P1dB

°C/W

0.7

-0.5

Channel-to-Case

VDS = 1.5 V, VGS = 0 V

VDS = 2.5 V, IDS = 2 mA

IGD = 2 mA

IDSS

Saturated Drain Current

Pinch-off Voltage

0.18

-2.5

0.4

-1.8

BVGD

Gate to Drain Break Down Voltage

Note:

1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz.

California Eastern Laboratories

12 3

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