NE83Q93D

更新时间： 2024-09-13 22:14:39

品牌	Logo	应用领域
恩智浦 - NXP		网络接口电信集成电路电信电路光电二极管信息通信管理以太网以太网：16GBASE-T
页数	文件大小	规格书
11页	92K
描述
Enhanced coaxial Ethernet transceiver

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中文翻译

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技术参数
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NE83Q93D 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	PLASTIC, SOL-24	针数：	24
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
风险等级：	5.84	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G24	长度：	15.4 mm
负电源额定电压：	-9 V	功能数量：	1
端子数量：	24	收发器数量：	1
最高工作温度：	70 °C	最低工作温度：
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP24,.4	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	电源：	-9 V
认证状态：	Not Qualified	座面最大高度：	2.65 mm
子类别：	Network Interfaces	最大压摆率：	0.085 mA
表面贴装：	YES	技术：	BICMOS
电信集成电路类型：	ETHERNET TRANSCEIVER	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	7.5 mm
Base Number Matches：	1

NE83Q93D 数据手册

Philips Semiconductors

Product specification

Enhanced coaxial Ethernet transceiver

NE83Q93

DESCRIPTION

PIN CONFIGURATION

The NE83Q93 is a low power coaxial transceiver interface (CTI) for

Ethernet (10base5) and Thin Ethernet (10base2) local area

networks. The CTI is connected between the coaxial cable and the

Data Terminal Equipment (DTE) and consists of a receiver,

transmitter, receive-mode collision detector, heartbeat generator and

jabber timer (see Block Diagram). The transmitter output connects

directly to a doubly terminated 50Ω cable, while the receiver output,

collision detector output and transmitter input are connected to the

DTE through isolation transformers. Isolation between the CTI and

the DTE is an IEEE 802.3 requirement that can be met on signal

lines by using a set of pulse transformers. Power isolation for the

CTI is achieved using DC-to-DC conversion through a power

transformer (see Figure 1, Connection Diagram).

D, N Packages

CD+

CDS

CD–

RX+

TXO

RXI

RR–

RR+

RX–

TX+

TX–

GND

HBE

The part is functionally the same as the NE83Q92, but with

additional features such as a transmit enable input, a carrier detect

output and five status LED driver outputs.

TEN

CRS

XLED

RLED

The NE83Q93 is manufactured on an advanced BiCMOS process

and is available in an SOL package making it ideally suited to

lap-top personal computers or systems where low power

consumption, limited board space and jumperless design is

required. Refer to selection flow chart for optimal application.

JLED

LINK

LCOM

CLED

SD00311

FEATURES

• Smart squelch on data inputs eliminates false activations

• Fully compliant with Ethernet II, IEEE 802.3 10BASE-5 and

• Transmit enable input and carrier sense output for repeater

10BASE-2, and ISO 8802/3 interface specifications

applications

• Functionally compatible with industry standard 8392 applications

• Five LED status drivers for transmit, receive, collision, jabber and

• Optimal implementation can use 1 Watt DC-DC converter and

link fail indication

reduces external parts count

• Advanced BiCMOS process for extremely low power operation

• Available in 24-pin DIP and 24-pin SOL packages

• Full ESD protection

• High efficiency AUI drivers minimize current consumption under

idle conditions by automatically powering-down

• Automatically disables AUI drivers when disconnecting coax

cable, allowing hard-wiring of AUI connector and local/integrated

CTI connection

• Power-on reset prevents glitches on coaxial cable

ORDERING INFORMATION

DESCRIPTION

TEMPERATURE RANGE

0 to +70°C

ORDER CODE

NE83Q93N

DWG #

0410D

24-Pin Plastic Dual In-Line Package (DIP)

24-Pin Plastic Small Outline Large (SOL) Package

0 to +70°C

NE83Q93D

SOT137-1

1995 May 1

853-1738 15180

12 3 4 5 6 7...11

中文翻译

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与NE83Q93D相关器件

型号	品牌	获取价格	描述	数据表
NE83Q93N	NXP	获取价格	Enhanced coaxial Ethernet transceiver
NE83Q94DK	NXP	获取价格	IC DATACOM, ETHERNET TRANSCEIVER, PDSO20, 0.170 INCH, PLASTIC, SSOP-20, Network Interface
NE83Q94DK-T	NXP	获取价格	IC DATACOM, ETHERNET TRANSCEIVER, PDSO20, 0.170 INCH, PLASTIC, SSOP-20, Network Interface
NE85001	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100_00	NEC	获取价格	C-BAND MEDIUM POWER GaAs MESFET
NE8500100-A	NEC	获取价格	暂无描述
NE8500100-RG	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100-RG-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE8500100-WB	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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