Datasheet > NE6500179A

NE6500179A

更新时间： 2024-09-24 21:12:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	46K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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NE6500179A 数据手册

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE6500179A

1 W L-BAND POWER GaAs MES FET

DESCRIPTION

The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high

linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

•

High output power: P^{O (1 dB)}= 30.0 dBm TYP.

High linear gain: G^L= 12.0 dB TYP.

High power added efficiency: η^add= 50 % TYP. @ V^DS= 6.0 V, I^Dset= 200 mA, f = 1.9 GHz

ORDERING INFORMATION

Part Number

Package

79A

Supplying Form

NE6500179A-T1

• 12 mm wide embossed taping

• Qty 1 kpcs/reel

Remark To order evaluation samples, consult your NEC sales representative

(Part number for sample order: NE6500179A).

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15107EJ1V0DS00 (1st edition)

Date Published September 2000 NS CP(K)

Printed in Japan

1999, 2000

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
NE6500179A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se
NE6500179A-T1	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se
NE6500179A-T1-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se
NE6500278	NEC	获取价格	RF Power Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel,
NE6500379	NEC	获取价格	3W L, S-BAND POWER GaAs MESFET
NE6500379A	NEC	获取价格	3W L, S-BAND POWER GaAs MESFET
NE6500379A	CEL	获取价格	3W, L/S-BAND MEDIUM POWER GaAs MESFET
NE6500379A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
NE6500379A-T1	CEL	获取价格	3W, L/S-BAND MEDIUM POWER GaAs MESFET
NE6500379A-T1	NEC	获取价格	3W L, S-BAND POWER GaAs MESFET