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NE5532DR2G PDF预览

NE5532DR2G

更新时间: 2024-11-04 04:37:47
品牌 Logo 应用领域
安森美 - ONSEMI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
10页 170K
描述
Internally Compensated Dual Low Noise Operational Amplifier

NE5532DR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, PLASTIC, SOP-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.36Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):1 µA25C 时的最大偏置电流 (IIB):0.8 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电压:5000 µVJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:10.3 mm
低-失调:NO湿度敏感等级:3
负供电电压上限:-22 V标称负供电电压 (Vsup):-15 V
功能数量:2端子数量:16
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):250电源:+-15 V
认证状态:Not Qualified座面最大高度:2.65 mm
标称压摆率:9 V/us子类别:Operational Amplifier
最大压摆率:16 mA供电电压上限:22 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:10000 kHz
最小电压增益:10000宽度:7.5 mm
Base Number Matches:1

NE5532DR2G 数据手册

 浏览型号NE5532DR2G的Datasheet PDF文件第2页浏览型号NE5532DR2G的Datasheet PDF文件第3页浏览型号NE5532DR2G的Datasheet PDF文件第4页浏览型号NE5532DR2G的Datasheet PDF文件第5页浏览型号NE5532DR2G的Datasheet PDF文件第6页浏览型号NE5532DR2G的Datasheet PDF文件第7页 
NE5532, SA5532, SE5532,  
NE5532A, SE5532A  
Internally Compensated  
Dual Low Noise  
Operational Amplifier  
http://onsemi.com  
The 5532 is a dual high-performance low noise operational  
amplifier. Compared to most of the standard operational amplifiers,  
such as the 1458, it shows better noise performance, improved output  
drive capability and considerably higher small-signal and power  
bandwidths.  
This makes the device especially suitable for application in  
high-quality and professional audio equipment, instrumentation and  
control circuits, and telephone channel amplifiers. The op amp is  
internally compensated for gains equal to one. If very low noise is of  
prime importance, it is recommended that the 5532A version be used  
because it has guaranteed noise voltage specifications.  
SOIC8  
D SUFFIX  
CASE 751  
8
1
1
PDIP8  
N SUFFIX  
CASE 626  
8
SOIC16 WB  
D SUFFIX  
CASE 751G  
Features  
16  
Small-Signal Bandwidth: 10 MHz  
Output Drive Capability: 600 W, 10 V  
Input Noise Voltage: 5.0 nVń Hz (Typical)  
DC Voltage Gain: 50000  
AC Voltage Gain: 2200 at 10 kHz  
Power Bandwidth: 140 kHz  
Slew Rate: 9.0 V/ms  
Large Supply Voltage Range: "3.0 to "20 V  
Compensated for Unity Gain  
PbFree Packages are Available  
1
RMS  
Ǹ
PIN CONNECTIONS  
N, D8 Packages  
8
7
6
5
OUT  
1
2
3
4
V+  
A
IN  
OUT  
A
A
B
A
B
+IN  
IN  
B
B
V-  
+IN  
Top View  
D Package*  
IN  
1
2
3
4
5
6
7
8
NC  
16  
A
15  
14  
13  
12  
11  
NC  
NC  
+IN  
A
NC  
OUT  
V−  
NC  
NC  
A
V+  
OUT  
B
10 NC  
+IN  
B
B
9
NC  
IN  
Top View  
*SOL and non-standard pinout.  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 6 of this data sheet.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 Rev. 1  
NE5532/D  

NE5532DR2G 替代型号

型号 品牌 替代类型 描述 数据表
NE5532DG ONSEMI

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