Datasheet > NE5520279A-T1-A

NE5520279A-T1-A

更新时间： 2024-11-09 04:37:47

品牌	Logo	应用领域
CEL		晶体晶体管 ISM频段放大器
页数	文件大小	规格书
8页	352K
描述
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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NE5520279A-T1-A 数据手册

NEC'S 3.2 V, 2 W, L&S BAND

MEDIUM POWER SILICON LD-MOSFET

NE5520279A

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC SURFACE MOUNT PACKAGE:

5.7x5.7x1.1 mm MAX

PACKAGE OUTLINE 79A

(Bottom View)

4.2 MAX.

Source

1.5±0.2

• HIGH OUTPUT POWER:

Source

+32 dBm TYP

• HIGH LINEAR GAIN:

Gate

Drain

Gate

Drain

10 dB TYP @ 1.8 GHz

• HIGH POWER ADDED EFFICIENCY:

45% TYP at 1.8 GHz

• SINGLE SUPPLY:

2.8 to 6.0 V

0.4±0.15

5.7 MAX.

0.8 MAX.

3.6±0.2

DESCRIPTION

APPLICATIONS

NEC's NE5520279A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the power ampliﬁer

for mobile and ﬁxed wireless applications. Die are manu-

factured using NEC's NEWMOS technology (NEC's 0.6 μm

WSi gate lateral MOSFET) and housed in a surface mount

package.

• DIGITAL CELLULAR PHONES:

3.2 V DCS1800 Handsets

• 0.7-2.5 GHz FIXED WIRELESS ACCESS

• W-LAN

• SHORT RANGE WIRELESS

• RETAIL BUSINESS RADIO

• SPECIAL MOBILE RADIO

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE5520279A

79A

PACKAGE OUTLINE

SYMBOLS

POUT

CHARACTERISTICS

Output Power

UNITS

dBm

MIN

TYP

32.0

MAX

TEST CONDITIONS

30.5

f = 1.8 GHz, VDS = 3.2 V,

IDSQ = 700 mA, PIN = 25 dBm, except

PIN = 5 dBm for Linear Gain

Linear Gain

ηADD

Power Added Efﬁciency

Drain Current

800

IGSS

Gate-to-Source Leakage Current

100

VGS = 5.0 V

VDS = 6.0 V

IDSS

Saturated Drain Current

(Zero Gate Voltage Drain Current)

VTH

Gate Threshold Voltage

Transconductance

1.0

1.4

1.3

1.9

VDS = 3.5 V, IDS = 1 mA

VDS = 3.5 V, IDS = 700 mA

IDSS = 10 μA

BVDSS

RTH

Drain-to-Source Breakdown Voltage

Thermal Resistance

°C/W

Channel-to-Case

Notes:

1. DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

2. Pin = 5 dBm

California Eastern Laboratories

12 3 4 5 6 7 8

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