5秒后页面跳转
捷配首页

Datasheet > 放大器电路 > 运算放大器> NE5517NG
NE5517NG PDF预览

NE5517NG

更新时间： 2024-11-09 04:37:47
品牌 Logo 应用领域
安森美 - ONSEMI 放大器
页数 文件大小 规格书
14页 187K
描述
Dual Operational Transconductance Amplifier

阅读下载

中文翻译

获取价格

NE5517NG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DIP
包装说明：LEAD FREE, PLASTIC, DIP-16针数：16
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.3
放大器类型：OPERATIONAL AMPLIFIER架构：TRANSCONDUCTANCE
最大平均偏置电流 (IIB)：8 µA25C 时的最大偏置电流 (IIB)：5 µA
标称共模抑制比：110 dB频率补偿：YES
最大输入失调电压：5000 µVJESD-30 代码：R-PDIP-T16
JESD-609代码：e3长度：19.175 mm
低-失调：NO负供电电压上限：-22 V
标称负供电电压 (Vsup)：-15 V功能数量：2
端子数量：16最高工作温度：70 °C
最低工作温度：封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP16,.3
封装形状：RECTANGULAR封装形式：IN-LINE
包装方法：RAIL峰值回流温度（摄氏度）：260
电源：+-15 V认证状态：Not Qualified
座面最大高度：4.4 mm标称压摆率：50 V/us
子类别：Operational Amplifiers最大压摆率：4 mA
供电电压上限：22 V标称供电电压 (Vsup)：15 V
表面贴装：NO技术：BIPOLAR
温度等级：COMMERCIAL端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
标称均一增益带宽：2000 kHz宽度：7.62 mm
Base Number Matches：1

NE5517NG 数据手册

 浏览型号NE5517NG的Datasheet PDF文件第2页浏览型号NE5517NG的Datasheet PDF文件第3页浏览型号NE5517NG的Datasheet PDF文件第4页浏览型号NE5517NG的Datasheet PDF文件第5页浏览型号NE5517NG的Datasheet PDF文件第6页浏览型号NE5517NG的Datasheet PDF文件第7页 
NE5517, NE5517A, AU5517  
Dual Operational  
Transconductance Amplifier  
The AU5517 and NE5517 contain two current-controlled  
transconductance amplifiers, each with a differential input and  
push-pull output. The AU5517/NE5517 offers significant design and  
performance advantages over similar devices for all types of  
programmable gain applications. Circuit performance is enhanced  
through the use of linearizing diodes at the inputs which enable a  
10 dB signal-to-noise improvement referenced to 0.5% THD. The  
AU5517/NE5517 is suited for a wide variety of industrial and  
consumer applications.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Constant impedance of the buffers on the chip allow general use of  
the AU5517/NE5517. These buffers are made of Darlington  
transistors and a biasing network that virtually eliminate the change of  
SOIC−16  
D SUFFIX  
CASE 751B  
xx5517DG  
AWLYWW  
1
1
offset voltage due to a burst in the bias current I , hence eliminating  
ABC  
the audible noise that could otherwise be heard in high quality audio  
applications.  
Features  
• Constant Impedance Buffers  
1
PDIP−16  
N SUFFIX  
CASE 648  
• DV of Buffer is Constant with Amplifier I  
Change  
BE  
BIAS  
NE5517yy  
AWLYYWWG  
• Excellent Matching Between Amplifiers  
• Linearizing Diodes  
• High Output Signal-to-Noise Ratio  
• Pb−Free Packages are Available*  
1
xx  
yy  
A
= AU or NE  
= AN or N  
= Assembly Location  
Applications  
WL = Wafer Lot  
YY, Y = Year  
WW = Work Week  
• Multiplexers  
• Timers  
G
= Pb−Free Package  
• Electronic Music Synthesizers  
• Dolby® HX Systems  
• Current-Controlled Amplifiers, Filters  
• Current-Controlled Oscillators, Impedances  
PIN CONNECTIONS  
N, D Packages  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
I
I
ABCb  
ABCa  
D
a
D
b
+IN  
a
+IN  
−IN  
VO  
b
−IN  
a
b
VO  
a
b
V−  
V+  
IN  
IN  
BUFFERa  
BUFFERa  
BUFFERb  
VO  
VO  
BUFFERb  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 13 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 3  
NE5517/D  
1234567...14

中文翻译

下载PDF

NE5517NG 替代型号

型号 品牌 替代类型 描述 数据表
NE5517N ONSEMI

完全替代

 Dual Operational Transconductance Amplifier
NE5517ANG ONSEMI

类似代替

 Dual Operational Transconductance Amplifier
NE5517AN ONSEMI

类似代替

 Dual Operational Transconductance Amplifier

与NE5517NG相关器件

型号 品牌 获取价格 描述 数据表
NE5517NSIIA PHILIPS

获取价格

 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16
NE5517NSIIB PHILIPS

获取价格

 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16
NE5520279A CEL

获取价格

 		3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520279A NEC

获取价格

 		NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520279A-A NEC

获取价格

 		RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
NE5520279A-T1 NEC

获取价格

 		NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520279A-T1A NEC

获取价格

 		RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
NE5520279A-T1-A CEL

获取价格

 		3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520379A NEC

获取价格

 		RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
NE5520379A CEL

获取价格

 		NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

与NE5517NG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证