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NE5517DR2G

更新时间： 2024-11-06 04:37:47
品牌 Logo 应用领域
安森美 - ONSEMI 放大器
页数 文件大小 规格书
14页 187K
描述
Dual Operational Transconductance Amplifier

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中文翻译

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NE5517DR2G 数据手册

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NE5517, NE5517A, AU5517  
Dual Operational  
Transconductance Amplifier  
The AU5517 and NE5517 contain two current-controlled  
transconductance amplifiers, each with a differential input and  
push-pull output. The AU5517/NE5517 offers significant design and  
performance advantages over similar devices for all types of  
programmable gain applications. Circuit performance is enhanced  
through the use of linearizing diodes at the inputs which enable a  
10 dB signal-to-noise improvement referenced to 0.5% THD. The  
AU5517/NE5517 is suited for a wide variety of industrial and  
consumer applications.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Constant impedance of the buffers on the chip allow general use of  
the AU5517/NE5517. These buffers are made of Darlington  
transistors and a biasing network that virtually eliminate the change of  
SOIC−16  
D SUFFIX  
CASE 751B  
xx5517DG  
AWLYWW  
1
1
offset voltage due to a burst in the bias current I , hence eliminating  
ABC  
the audible noise that could otherwise be heard in high quality audio  
applications.  
Features  
• Constant Impedance Buffers  
1
PDIP−16  
N SUFFIX  
CASE 648  
• DV of Buffer is Constant with Amplifier I  
Change  
BE  
BIAS  
NE5517yy  
AWLYYWWG  
• Excellent Matching Between Amplifiers  
• Linearizing Diodes  
• High Output Signal-to-Noise Ratio  
• Pb−Free Packages are Available*  
1
xx  
yy  
A
= AU or NE  
= AN or N  
= Assembly Location  
Applications  
WL = Wafer Lot  
YY, Y = Year  
WW = Work Week  
• Multiplexers  
• Timers  
G
= Pb−Free Package  
• Electronic Music Synthesizers  
• Dolby® HX Systems  
• Current-Controlled Amplifiers, Filters  
• Current-Controlled Oscillators, Impedances  
PIN CONNECTIONS  
N, D Packages  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
I
I
ABCb  
ABCa  
D
a
D
b
+IN  
a
+IN  
−IN  
VO  
b
−IN  
a
b
VO  
a
b
V−  
V+  
IN  
IN  
BUFFERa  
BUFFERa  
BUFFERb  
VO  
VO  
BUFFERb  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 13 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 3  
NE5517/D  
1234567...14

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NE5517DR2G 替代型号

型号 品牌 替代类型 描述 数据表
NE5517DG ONSEMI

类似代替

 Dual Operational Transconductance Amplifier
NE5517D ONSEMI

类似代替

 Dual Operational Transconductance Amplifier
AU5517DR2G ONSEMI

类似代替

 Dual Operational Transconductance Amplifier

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NE5517K8+/-.25% VISHAY

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 		Fixed Resistor, Metal Film, 0.25W, 17800ohm, 250V, 1% +/-Tol, -25,25ppm/Cel,
NE5517N NXP

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 		Dual operational transconductance amplifier
NE5517N ONSEMI

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 		Dual Operational Transconductance Amplifier
NE5517N PHILIPS

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 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16,
NE5517N-B PHILIPS

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 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16
NE5517NG ONSEMI

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 		Dual Operational Transconductance Amplifier
NE5517NSIIA PHILIPS

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 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16
NE5517NSIIB PHILIPS

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 		Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16

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