是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOIC-16 | 针数: | 16 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.19 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | TRANSCONDUCTANCE | 最大平均偏置电流 (IIB): | 8 µA |
25C 时的最大偏置电流 (IIB): | 5 µA | 标称共模抑制比: | 110 dB |
频率补偿: | YES | 最大输入失调电压: | 5000 µV |
JESD-30 代码: | R-PDSO-G16 | JESD-609代码: | e0 |
长度: | 9.9 mm | 低-失调: | NO |
湿度敏感等级: | 1 | 负供电电压上限: | -22 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 2 |
端子数量: | 16 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | SOP | 封装等效代码: | SOP16,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
包装方法: | TAPE AND REEL | 峰值回流温度(摄氏度): | 240 |
电源: | +-15 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 标称压摆率: | 50 V/us |
子类别: | Operational Amplifiers | 最大压摆率: | 4 mA |
供电电压上限: | 22 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
标称均一增益带宽: | 2000 kHz | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE5517DR2G | ONSEMI |
获取价格 |
Dual Operational Transconductance Amplifier | |
NE5517D-T | ETC |
获取价格 |
Transconductance Operational Amplifier | |
NE5517K8+/-.25% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 17800ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel, | |
NE5517K8+/-1% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 17800ohm, 250V, 1% +/-Tol, -25,25ppm/Cel, | |
NE5517N | NXP |
获取价格 |
Dual operational transconductance amplifier | |
NE5517N | ONSEMI |
获取价格 |
Dual Operational Transconductance Amplifier | |
NE5517N | PHILIPS |
获取价格 |
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16, | |
NE5517N-B | PHILIPS |
获取价格 |
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16 | |
NE5517NG | ONSEMI |
获取价格 |
Dual Operational Transconductance Amplifier | |
NE5517NSIIA | PHILIPS |
获取价格 |
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16 |