Datasheet > NE32684A-T1

NE32684A-T1

更新时间： 2024-09-25 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
5页	194K
描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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中文翻译

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数据手册

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NE32684A-T1 数据手册

ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

NE32684A

NOT RECOMMENDED FOR NEW DESIGN

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 2 V, IDS = 10 mA

• VERY LOW NOISE FIGURE:

1.2

0.5 dB typical at 12 GHz

• HIGH ASSOCIATED GAIN:

11.5 dB Typical at 12 GHz

• LG = 0.20 µm, WG = 200 µm

0.8

0.6

0.4

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

DESCRIPTION

0.2

The NE32684A is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE32684A

84AS

SYMBOLS

NF¹

PARAMETERS AND CONDITIONS

Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz

Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz

UNITS

MIN

TYP

0.5

MAX

0.6

GA¹

10.0

11.5

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz

VDS = 2 V, IDS = 10 mA

dBm

8.5

10.75

VDS = 2 V, IDS = 20 mA

G1dB

Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA

VDS = 2 V, IDS = 20 mA

11.0

11.5

IDSS

Saturated Drain Current, VDS = 2 V,VGS = 0 V

Pinch-off Voltage, VDS = 2 V, IDS = 100 µA

Transconductance, VDS = 2 V, ID = 10 mA

Gate to Source Leakage Current, VGS = -3 V

Thermal Resistance (Channel to Ambient)

Thermal Resistance (Channel to Case)

-2.0

-0.8

-0.2

IGSO

µA

0.5

750

10.0

350

RTH (CH-A)

RTH (CH-C)

Note:

°C/W

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4 5

中文翻译

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与NE32684A-T1相关器件

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NE32702	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50MA I(C) \| MACRO-X
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