型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE24008000J0G | AMPHENOL |
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Barrier Strip Terminal Block | |
NE24009000J0G | AMPHENOL |
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Barrier Strip Terminal Block | |
NE24200 | NEC |
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C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP | |
NE24200 | CEL |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-jun | |
NE24200_00 | NEC |
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) | |
NE24283B | NEC |
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) | |
NE24300 | CEL |
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RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN | |
NE243187 | CEL |
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RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN | |
NE243188 | CEL |
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RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN | |
NE243287 | CEL |
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RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |