Datasheet > NDT4N60

NDT4N60

更新时间： 2024-09-25 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	2528K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT4N60 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NDT4N60

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● V^{DS (V)}= 600V

● ID = 3.9 A (VGS = 10V)

● R^DS(ON)＜ 1.2Ω (VGS = 10V)

0.127

max

+0.1

-0.1

● Low effective output capacitance

0.80

0.1

0.60⁺_-

1 Gate

2.3

4.60

+0.15

-0.15

2 Drain

3 Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

3.9

Unit

Gate-Source Voltage

Tc=25℃

Tc=70℃

Continuous Drain Current

2.5

Pulsed Drain Current

Avalanche Current

11.7

3.9

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(Note.1)

128

dv/dt

4.5

V/ns

Tc=25℃

- Derate above 25°C

0.4

W/℃

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Maximum Lead Temperature for Soldering Purpose

Junction Temperature

thJA

℃/W

RthJC

2.5

300

150

℃

Storage Temperature Range

stg

-55 to 150

Note.1: IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

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