Datasheet > NDSH50120C

NDSH50120C

更新时间： 2024-09-29 11:10:59

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安森美 - ONSEMI		/
页数	文件大小	规格书
6页	298K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

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NDSH50120C 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

50 A, 1200 V, D3, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

NDSH50120C

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−247−2LD

CASE 340DA

MARKING DIAGRAM

Features

 Max Junction Temperature 175C

 Avalanche Rated 380 mJ

 High Surge Current Capacity

 Positive Temperature Coefficient

 Ease of Paralleling

DSH

50120C

AYWWZZ

 No Reverse Recovery / No Forward Recovery

 These Devices are Halogen Free/BFR Free and are RoHS Compliant

Applications

 General Purpose

 SMPS, Solar Inverter, UPS

 Power Switching Circuits

DSH50120C

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

 Semiconductor Components Industries, LLC, 2021

Publication Order Number:

January, 2023 − Rev. 2

NDSH50120C/D

12 3 4 5 6

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