Datasheet > NDSH40120CDN

NDSH40120CDN

更新时间： 2024-11-16 11:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	285K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L

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NDSH40120CDN 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

40 A, 1200 V, D3, TO-247-3L

Schottky Diode

NDSH40120CDN

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−247−3LD

CASE 340CX

MARKING DIAGRAM

Features

 Max Junction Temperature 175C

 Avalanche Rated 166 mJ

 High Surge Current Capacity

 Positive Temperature Coefficient

 Ease of Paralleling

DSH40

120CDN

AYWWZZ

 No Reverse Recovery / No Forward Recovery

 This Device is Halide Free and RoHS Compliant with Exemption 7a,

Pb−Free 2LI (on second level interconnection)

DSH40120CDN

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

Applications

 General Purpose

 SMPS, Solar Inverter, UPS

 Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

 Semiconductor Components Industries, LLC, 2021

Publication Order Number:

January, 2023 − Rev. 1

NDSH40120CDN/D

12 3 4 5 6

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