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NDSH20120C PDF预览

NDSH20120C

更新时间: 2024-09-29 11:15:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 297K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

NDSH20120C 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
20 A, 1200 V, D3, TO-247-2L  
1. Cathode  
2. Anode  
Schottky Diode  
NDSH20120C  
Description  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
1
2
TO2472LD  
CASE 340DA  
MARKING DIAGRAM  
Features  
Max Junction Temperature 175C  
Avalanche Rated 166 mJ  
High Surge Current Capacity  
Positive Temperature Coefficient  
Ease of Paralleling  
DSH  
20120C  
AYWWZZ  
No Reverse Recovery / No Forward Recovery  
These Devices are Halogen Free/BFR Free and are RoHS Compliant  
DSH20120C  
A
YWW  
ZZ  
= Specific Device Code  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Lot Code  
Applications  
General Purpose  
SMPS, Solar Inverter, UPS  
Power Switching Circuits  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
January, 2023 Rev. 2  
NDSH20120C/D  

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