Datasheet > NDSH10170A

NDSH10170A

更新时间： 2024-09-29 11:15:55

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
6页	298K
描述
碳化硅（SiC）肖特基二极管 - EliteSiC系列，10A，1700V，D1，TO-247-2L

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NDSH10170A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

10 A, 1700 V, D1, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

NDSH10170A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−247−2LD

CASE 340DA

MARKING DIAGRAM

Features

 Max Junction Temperature 175C

 Avalanche Rated 156 mJ

 High Surge Current Capacity

 Positive Temperature Coefficient

 Ease of Paralleling

NDSH

10170A

AYWWZZ

 No Reverse Recovery / No Forward Recovery

 These Devices are Halogen Free/BFR Free and are RoHS Compliant

NDSH10170A

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

Applications

 SMPS, Solar Inverter, UPS

 Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

 Semiconductor Components Industries, LLC, 2020

Publication Order Number:

January, 2023 − Rev. 3

NDSH10170A/D

12 3 4 5 6

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