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NDS8410AF011 PDF预览

NDS8410AF011

更新时间: 2024-09-23 14:28:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 265K
描述
Power Field-Effect Transistor, 10.8A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

NDS8410AF011 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):10.8 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NDS8410AF011 数据手册

 浏览型号NDS8410AF011的Datasheet PDF文件第2页浏览型号NDS8410AF011的Datasheet PDF文件第3页浏览型号NDS8410AF011的Datasheet PDF文件第4页浏览型号NDS8410AF011的Datasheet PDF文件第5页浏览型号NDS8410AF011的Datasheet PDF文件第6页浏览型号NDS8410AF011的Datasheet PDF文件第7页 
March 1997  
NDS8410A  
Single N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
10.8 A, 30 V. RDS(ON) = 0.012 W @ VGS = 10 V  
SO-8 N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high cell  
density, DMOS technology. This very high density process is  
especially tailored to minimize on-state resistance and provide  
superior switching performance. These devices are particularly  
suited for low voltage applications such as notebook computer  
power management and other battery powered circuits where  
fast switching, low in-line power loss, and resistance to  
transients are needed.  
RDS(ON) = 0.017 W @ VGS = 4.5 V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
____________________________________________________________________________________________  
5
6
7
8
4
3
2
1
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted  
Symbol Parameter  
NDS8410A  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
V
A
±20  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
10.8  
50  
2.5  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
W
PD  
1.2  
(Note 1c)  
1
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
°C/W  
°C/W  
RqJA  
RqJC  
© 1997 Fairchild Semiconductor Corporation  
NDS8410A Rev.C1  

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