NDS351AN

更新时间： 2024-11-27 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	79K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

NDS351AN 数据手册

April 1997

NDS351AN

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

1.2A, 30 V. R_DS(ON)= 0.25 W @ V_GS= 4.5 V

R_DS(ON)= 0.16 W @ V_GS= 10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT^TM-3 design for superior

thermal and electrical capabilities.

cards, and

other battery powered circuits where fast

High density cell design for extremely low R_DS(ON)

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface mount

_________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS351AN

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

± 1.2

(Note 1a)

± 10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

250

°C/W

(Note 1)

NDS351AN Rev. C

12 3 4 5 6

中文翻译

下载PDF

NDS351AN 替代型号

型号	品牌	替代类型	描述	数据表
BSH108,215	NXP	功能相似	N-channel TrenchMOS logic level FET TO-236 3-Pin
IRLML2030TRPBF	INFINEON	功能相似	HEXFET Power MOSFET
IRLML0030TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

与NDS351AN相关器件

型号	品牌	获取价格	描述	数据表
NDS351AN_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351AND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351AN-G	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
NDS351ANL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351AN-OLDDIE	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
NDS351ANS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351N	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351N	TYSEMI	获取价格	SUPERSOT-3
NDS351N	ONSEMI	获取价格	N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ
NDS351N/D87Z	TI	获取价格	1100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

与NDS351AN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

NDS351AN

NDS351AN 数据手册

NDS351AN 替代型号

与NDS351AN相关器件

与NDS351AN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NDS351AN

NDS351AN 数据手册

NDS351AN 替代型号

与NDS351AN相关器件

与NDS351AN相关文章

您还可以找

您在本页遇到什么问题？