Datasheet > NDS351AN

NDS351AN

更新时间： 2024-11-28 12:49:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	255K
描述
SUPERSOT-3

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NDS351AN 数据手册

SMD Type

Product specification

NDS351AN

General Description

Features

1.2A, 30 V. R_DS(ON)= 0.25 W @ V_GS= 4.5 V

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

R_DS(ON)= 0.16 W @ V_GS= 10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT^TM-3 design for superior

thermal and electrical capabilities.

cards, and

other battery powered circuits where fast

High density cell design for extremely low R_DS(ON)

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface mount

_________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS351AN

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

± 1.2

(Note 1a)

± 10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q

Thermal Resistance, Junction-to-Ambient (Note 1a)

250

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

1 of 3

http://www.twtysemi.com

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4008-318-123

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NDS351AN-G	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
NDS351ANL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351AN-OLDDIE	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
NDS351ANS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS351N	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351N	TYSEMI	获取价格	SUPERSOT-3
NDS351N	ONSEMI	获取价格	N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ
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