Datasheet > NDS336PD87Z

NDS336PD87Z

更新时间： 2024-11-26 09:13:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	83K
描述
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

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NDS336PD87Z 数据手册

June 1997

NDS336P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

-1.2 A, -20 V, R_DS(ON)= 0.27 W @ V_GS= -2.7 V

SuperSOT^TM-3 P-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage

applications such as notebook computer power management,

portable electronics, and other battery powered circuits where

fast high-side switching, and low in-line power loss are needed

in a very small outline surface mount package.

R_DS(ON)= 0.2 W @ V_GS= -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V_GS(th)< 1.0V.

Proprietary package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface

package.

Mount

________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDS336P

Units

Drain-Source Voltage

-20

±8

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

-1.2

-10

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

°C/W

NDS336P Rev. E

12 3 4 5 6 7

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