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NDS332P_NL

更新时间: 2024-11-25 13:11:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 81K
描述
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SUPERSOT-3

NDS332P_NL 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE, ESD RATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDS332P_NL 数据手册

 浏览型号NDS332P_NL的Datasheet PDF文件第2页浏览型号NDS332P_NL的Datasheet PDF文件第3页浏览型号NDS332P_NL的Datasheet PDF文件第4页浏览型号NDS332P_NL的Datasheet PDF文件第5页浏览型号NDS332P_NL的Datasheet PDF文件第6页 
June 1997  
NDS332P  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
-1 A, -20 V, RDS(ON) = 0.41 W @ VGS= -2.7 V  
RDS(ON) = 0.3 W @ VGS = -4.5 V.  
These P-Channel logic level enhancement mode power field  
effect transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density process is  
especially tailored to minimize on-state resistance. These  
devices are particularly suited for low voltage applications such as  
notebook computer power management, portable electronics,  
and other battery powered circuits where fast high-side  
switching, and low in-line power loss are needed in a very small  
outline surface mount package.  
Very low level gate drive requirements allowing direct  
operation in 3V circuits. VGS(th) < 1.0V.  
Proprietary package design using copper lead frame for  
superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
Compact industry standard SOT-23 surface Mount  
package.  
________________________________________________________________________________  
D
S
G
Asolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol Parameter  
NDS332P  
-20  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
V
V
A
Gate-Source Voltage - Continuous  
±8  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
(Note 1a)  
-1  
-10  
Maximum Power Dissipation  
0.5  
W
PD  
(Note 1b)  
0.46  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
250  
75  
°C/W  
°C/W  
(Note 1)  
© 1997 Fairchild Semiconductor Corporation  
NDS332P Rev. E  

NDS332P_NL 替代型号

型号 品牌 替代类型 描述 数据表
NDS332P FAIRCHILD

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