NDF08N60Z, NDP08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
• Low ON Resistance
• Low Gate Charge
http://onsemi.com
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
V
DSS
R
(MAX) @ 3.5 A
DS(ON)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
600 V
0.95 W
Rating
Symbol NDF08N60Z NDP08N60Z Unit
Drain−to−Source Voltage
V
600
7.5 (Note 1)
V
A
DSS
N−Channel
Continuous Drain Current
R
I
D
7.5
4.8
30
D (2)
q
JC
Continuous Drain Current
I
D
4.8 (Note 1)
30 (Note 1)
35
A
A
R
q
JC
T = 100°C
A
Pulsed Drain Current,
@ 10 V
I
DM
G (1)
V
GS
Power Dissipation
P
139
W
V
D
Gate−to−Source Voltage
Single Pulse Avalanche
V
30
GS
S (3)
TO−220FP
CASE 221D
STYLE 1
E
235
mJ
AS
Energy, I = 7.5 A
MARKING
DIAGRAM
D
ESD (HBM)
(JESD 22−A114)
V
4000
V
V
esd
RMS Isolation Voltage
V
4500
ISO
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
NDF08N60ZG
or
NDP08N60ZG
AYWW
Peak Diode Recovery
dv/dt
4.5
7.5
V/ns
A
Continuous Source
Current (Body Diode)
I
S
Maximum Temperature for
Soldering Leads
T
260
°C
°C
Gate
Source
L
TO−220
CASE 221A
STYLE 5
Operating Junction and
Storage Temperature Range
T , T
−55 to 150
J
stg
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
1. Limited by maximum junction temperature
2. I v 7.5 A, di/dt ≤ 200 A/ms, V ≤ BV
, T ≤ 150°C.
J
D
DD
DSS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 0
NDF08N60Z/D