MPS6726
One Watt Amplifier
Transistors
PNP Silicon
http://onsemi.com
Features
• This is a Pb−Free Device*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−30
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
1
−40
EMITTER
−5.0
−1.0
Collector Current − Continuous
I
C
Total Device Dissipation @ T = 25°C
P
D
1.0
8.0
W
mW/°C
A
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
D
2.5
20
W
mW/°C
C
Derate above 25°C
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
1
2
THERMAL CHARACTERISTICS
Characteristic
3
STRAIGHT LEAD
BULK PACK
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
6726
AYWWG
G
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
5000 Units / Bulk
MPS6726G
TO−92
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 4
MPS6726/D