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NCV8402ASTT1G PDF预览

NCV8402ASTT1G

更新时间: 2024-09-24 12:33:59
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器
页数 文件大小 规格书
10页 128K
描述
Self-Protected Low Side Driver with Temperature and Current Limit

NCV8402ASTT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:0.52雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:42 V最大漏极电流 (Abs) (ID):1.94 A
最大漏极电流 (ID):1.54 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-261
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.74 W参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):200000 ns最大开启时间(吨):30000 ns
Base Number Matches:1

NCV8402ASTT1G 数据手册

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NCV8402, NCV8402A  
Self-Protected Low Side  
Driver with Temperature  
and Current Limit  
NCV8402/A is a three terminal protected LowSide Smart Discrete  
device. The protection features include overcurrent, overtemperature,  
ESD and integrated DraintoGate clamping for overvoltage  
protection. This device offers protection and is suitable for harsh  
automotive environments.  
http://onsemi.com  
V
(BR)DSS  
R
TYP  
I
D
MAX  
DS(ON)  
(Clamped)  
42 V  
165 mW @ 10 V  
2.0 A*  
Features  
*Max current limit value is dependent on input  
condition.  
ShortCircuit Protection  
Thermal Shutdown with Automatic Restart  
Overvoltage Protection  
Drain  
Integrated Clamp for Inductive Switching  
ESD Protection  
Overvoltage  
Protection  
Gate  
Input  
dV/dt Robustness  
Analog Drive Capability (Logic Level Input)  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
ESD Protection  
Temperature  
Limit  
Current  
Limit  
Current  
Sense  
These Devices are PbFree and are RoHS Compliant  
Typical Applications  
Source  
Switch a Variety of Resistive, Inductive and Capacitive Loads  
Can Replace Electromechanical Relays and Discrete Circuits  
Automotive / Industrial  
MARKING  
DIAGRAM  
DRAIN  
4
4
SOT223  
CASE 318E  
STYLE 3  
AYW  
xxxxx G  
G
1
2
3
1
2
3
SOURCE  
GATE  
DRAIN  
A
Y
= Assembly Location  
= Year  
W
= Work Week  
xxxxx = V8402 or 8402A  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCV8402STT1G  
NCV8402ASTT1G  
NCV8402STT3G  
NCV8402ASTT3G  
SOT223 1000/Tape & Reel  
(PbFree)  
SOT223 4000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 Rev. 8  
NCV8402/D  

NCV8402ASTT1G 替代型号

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NCV8402ASTT3G ONSEMI

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