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NCP6924CFCHT1G

更新时间： 2024-11-27 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关集成电源管理电路小信号双极晶体管转换器
页数 文件大小 规格书
3页 29K
描述
6 沟道功率管理集成电路 (PMIC)，带 2 个 DC-DC 转换器和 4 个 LDO

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中文翻译

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NCP6924CFCHT1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：5.69
模拟集成电路 - 其他类型：SWITCHING REGULATORBase Number Matches：1

NCP6924CFCHT1G 数据手册

 浏览型号NCP6924CFCHT1G的Datasheet PDF文件第2页浏览型号NCP6924CFCHT1G的Datasheet PDF文件第3页 
January 2005  
BC517  
NPN Darlington Transistor  
•
•
This device is designed for applications requiring extremely high current gain at currents to 1.0A.  
Sourced from process 05.  
TO-92  
1
1. Collector 2. Base 3. Emitter  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
Collector-Emitter Voltage  
V
V
CEO  
CBO  
EBO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
10  
V
I
- Continuous  
1.2  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 2.0mA, I = 0  
30  
40  
10  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 10µA, I = 0  
E
= 100nA, I = 0  
V
C
I
V
= 30V, I = 0  
100  
nA  
CB  
E
On Characteristics *  
h
DC Current Gain  
V
= 2.0V, I = 20mA  
30,000  
FE  
CE  
C
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= 100mA, I = 0.1mA  
1
V
V
CE(sat)  
BE(on)  
C
C
B
= 10mA, V = 5.0V  
1.4  
CE  
Thermal Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2005 Fairchild Semiconductor Corporation  
BC517 Rev. A  
1
www.fairchildsemi.com  
123

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