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NCP370MUAITXG

更新时间： 2024-11-08 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
11页 165K
描述
Positive and Negative Overvoltage Protection with Internal Low RON N-MOSFETs and Reverse Charge Control Pin

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中文翻译

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NCP370MUAITXG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：LGA包装说明：VFLGA,
针数：12Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：1.54
内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PBGA-B12JESD-609代码：e4
长度：3 mm湿度敏感等级：1
功能数量：1端子数量：12
最高工作温度：85 °C最低工作温度：-40 °C
输出电流流向：SOURCE封装主体材料：PLASTIC/EPOXY
封装代码：VFLGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：0.6 mm
标称供电电压：5 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：BUTT端子节距：0.5 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：5 µs接通时间：4000 µs
宽度：3 mmBase Number Matches：1

NCP370MUAITXG 数据手册

 浏览型号NCP370MUAITXG的Datasheet PDF文件第2页浏览型号NCP370MUAITXG的Datasheet PDF文件第3页浏览型号NCP370MUAITXG的Datasheet PDF文件第4页浏览型号NCP370MUAITXG的Datasheet PDF文件第5页浏览型号NCP370MUAITXG的Datasheet PDF文件第6页浏览型号NCP370MUAITXG的Datasheet PDF文件第7页 
NCP370  
Positive and Negative  
Overvoltage Protection  
with Internal Low RON  
N-MOSFETs and Reverse  
Charge Control Pin  
http://onsemi.com  
MARKING  
The NCP370 is an overvoltage, overcurrent and reverse control  
device. Two main modes are available by setting logic pins. First mode  
is Direct Mode from Wall−Adapter to the system. In this mode the  
system is both positive and negative over−voltage protected up to  
+28 V and down to −28 V. The wall adapter (or AC/DC charger) is  
disconnected from the system if the input voltage exceeds the  
overvoltage (OVLO) or undervoltage (UVLO) thresholds. At power  
DIAGRAM  
NCAI  
370  
1
12 PIN LLGA  
MU SUFFIX  
CASE 513AK  
ALYWG  
G
up, the V turns on 30 ms after the V exceeds the undervoltage  
threshold.  
out  
in  
A
L
= Assembly Location  
= Wafer Lot  
The second mode (see Tables 1 & 2), called the Reverse Mode,  
allows an external accessory to be powered by the system battery or  
boost converter. Here the external accessory would be connected to the  
device input (bottom connector of system) and the device battery  
would be at the device output. In this case overcurrent protection is  
activated to prevent accessory faults and battery discharge. Thanks to  
the NCP370 using an internal NMOS, the system cost and the PCB  
area of the application board are minimized.  
The NCP370 provides a negative going flag (FLAG) output which  
alerts the system that a fault has occurred.  
In addition, the device has ESD−protected input (15 kV Air) when  
bypassed with a 1 mF or larger capacitor.  
Y
W
G
= Year  
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
1
2
3
4
5
6
12  
11  
IN  
IN  
NC  
OUT  
FLAG  
DIR  
10  
9
GND  
RES  
RES  
RES  
NCP370  
8
REV  
Ilim  
7
Features  
• Overvoltage Protection Up to 28 V  
• Negative Voltage Protection Down to −28 V  
• Reverse Charge Control: REV  
• Direct Charge Control: DIR  
• Overcurrent Protection  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
• Thermal Shutdown  
• On−chip Low R  
NMOS Transistors: Typical 130 mW  
DS(on)  
• Overvoltage Lockout (OVLO)  
• Undervoltage Lockout (UVLO)  
• Soft−Start  
Typical Applications  
• Alert FLAG Output  
• Cell Phones  
• Camera Phones  
• Digital Still Cameras  
• Personal Digital Applications  
• MP3 Players  
• Compliance to IEC61000−4−2 (Level 4)  
8 kV (Contact)  
15 kV (Air)  
• ESD Ratings: Machine Model = B  
Human Body Model = 2  
• 12 Lead TLLGA 3x3 mm Package  
• This is a Pb−Free Device  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2008 − Rev. 2  
NCP370/D  
1234567...11

中文翻译

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NCP370MUAITXG 替代型号

型号 品牌 替代类型 描述 数据表
VNN3NV04PTR-E STMICROELECTRONICS

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