Datasheet > NCP1366BABCYDR2G

NCP1366BABCYDR2G

更新时间： 2024-11-30 11:11:11

品牌	Logo	应用领域
安森美 - ONSEMI		控制器
页数	文件大小	规格书
29页	935K
描述
低功耗离线恒定电流 PWM 电流模式控制器，带高电压启动电流源

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCP1366BABCYDR2G 数据手册

DATA SHEET

www.onsemi.com

MARKING

DIAGRAMS

Low Power Offline Constant

Current PWM Current-Mode

Controller with/without

High Voltage Startup

Current Source

SOIC−7

CASE 751U

XXXXX

ALYWX

TSOP−6

CASE 318G

xxxAYWG

NCP1361, NCP1366

The NCP1361/66 offers a new solution targeting output power

levels from a few watts up to 20 W in a universal−mains flyback

application. Due to a novel method this new controller offers a

primary−side constant current control, saving secondary−side

components to perform current regulation.

The NCP1361/66 operates in valley−lockout quasi−resonant peak

current mode control mode at nominal load to provide high efficiency.

When the secondary−side power starts diminishing, the switching

frequency naturally increases until a voltage−controlled oscillator

(VCO) takes the lead, synchronizing the MOSFET turn−on in a

drain−source voltage valley. The frequency is thus reduced by

stepping into successive valleys until the number 4 is reached. Beyond

this point, the frequency is linearly decreased in valley−switching

mode until a minimum is hit. Valley lockout during the first four

drain−source valleys prevents erratic discrete jumps and provides

good efficiency in lighter load situations.

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information on page 25 of

this data sheet.

Features

•

10% Current Regulation

• 560 V Startup Current Source

• No Frequency Clamp, 80 or 110 kHz Maximum Switching

Frequency Options

• Quasi−Resonant Operation with Valley Switching Operation

• Fixed Peak Current & Deep Frequency Foldback @ Light Load

Operation

• External Constant Voltage Feedback Adjustment

• Cycle by Cycle Peak Current Limit

• Built−In Soft−Start

• Over & Under Output Voltage Protection

• Wide Operation V Range (up to 28 V)

• Low Start−up Current (2.5 mA typ.) with NCP1361

• Clamped Gate−drive Output for MOSFET

• CS & Vs/ZCD pin Short and Open Protection

• Internal Temperature Shutdown

• Less than 30 mW No−Load Performance at High Line with

NCP1366 Version

• These are Pb−Free Devices

Typical Applications

• Low power ac−dc Adapters for Chargers

• Ac−dc USB chargers for Cell Phones, Tablets and Cameras

Publication Order Number:

August, 2022 − Rev. 4

NCP1361/D

12 3 4 5 6 7...29

中文翻译

下载PDF

与NCP1366BABCYDR2G相关器件

型号	品牌	获取价格	描述	数据表
NCP1366EABAYDR2G	ONSEMI	获取价格	低功耗离线恒定电流 PWM 电流模式控制器，带高电压启动电流源
NCP136AFCRC040T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCRC080T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCT080T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCT088T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCT105T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCT110T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136AFCT120T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136BFCT080T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA
NCP136CFCT120T2G	ONSEMI	获取价格	LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA

与NCP1366BABCYDR2G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP1366BABCYDR2G

NCP1366BABCYDR2G 数据手册

与NCP1366BABCYDR2G相关器件

与NCP1366BABCYDR2G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP1366BABCYDR2G

NCP1366BABCYDR2G 数据手册

与NCP1366BABCYDR2G相关器件

与NCP1366BABCYDR2G相关文章

您还可以找

您在本页遇到什么问题？