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NCP1365ACBAXDR2G

更新时间： 2024-09-20 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 控制器开关光电二极管
页数 文件大小 规格书
29页 373K
描述
低功耗离线固定电流和恒定电压初级侧 PWM 电流模式控制器，带高电压启动电流源

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NCP1365ACBAXDR2G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SOP, SOP7/8,.25Reach Compliance Code：compliant
Factory Lead Time：6 weeks风险等级：5.73
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：CURRENT-MODE
控制技术：PULSE WIDTH MODULATIONJESD-30 代码：R-PDSO-G7
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：7最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP7/8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.75 mm
最大供电电流 (Isup)：2.5 mA标称供电电压 (Vsup)：12 V
表面贴装：YES最大切换频率：117 kHz
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

NCP1365ACBAXDR2G 数据手册

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NCP1360, NCP1365  
Low Power Offline Constant  
Current & Constant Voltage  
Primary Side PWM  
Current-Mode Controller  
with/without High Voltage  
Startup Current Source  
www.onsemi.com  
MARKING  
DIAGRAMS  
8
The NCP1360/65 offers a new solution targeting output power  
levels from a few watts up to 20 W in a universal−mains flyback  
application. Thanks to a novel method this new controller saves the  
secondary feedback circuitry (opto−coupler and TL431 reference)  
while achieving excellent line and load regulation.  
SOIC−7  
CASE 751U  
XXXXX  
ALYWX  
G
1
The NCP1360/65 operates in valley−lockout quasi−resonant peak  
current mode control mode at nominal load to provide high efficiency.  
When the secondary−side power starts diminishing, the switching  
frequency naturally increases until a voltage−controlled oscillator  
(VCO) takes the lead, synchronizing the MOSFET turn−on in a  
drain−source voltage valley. The frequency is thus reduced by  
stepping into successive valleys until the number 4 is reached. Beyond  
this point, the frequency is linearly decreased in valley−switching  
mode until a minimum is hit. This technique keeps the output in  
regulation with the tiniest dummy load. Valley lockout during the first  
four drain−source valleys prevents erratic discrete jumps and provides  
good efficiency in lighter load situations.  
TSOP−6  
CASE 318G  
xxxAYWG  
G
1
1
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
W, WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 27 of  
Features  
• Primary−Side Feedback Eliminates Opto−coupler and TL431  
this data sheet.  
Reference  
•
•
5% Voltage Regulation  
10% Current Regulation  
• Low Start−up Current (2.5 mA typ.) with NCP1360  
• Clamped Gate−drive Output for MOSFET  
• CS & Vs/ZCD pin Short and Open Protection  
• Internal Temperature Shutdown  
• Less than 10 mW No−Load Performance at High Line  
with NCP1365 Version  
• 560 V Startup Current Source  
• No Frequency Clamp, 80 or 110 kHz Maximum  
Switching Frequency Options  
• Quasi−Resonant Operation with Valley Switching  
Operation  
• Fixed Peak Current & Deep Frequency Foldback @  
Light Load Operation.  
• Less than 30 mW No−Load Performance at High Line  
with NCP1360 Version  
• External Constant Voltage Feedback Adjustment  
• Cycle by Cycle Peak Current Limit  
• These are Pb−Free Devices  
Typical Applications  
• Build−In Soft−Start  
• Low power ac−dc Adapters for Chargers.  
• Ac−dc USB chargers for Cell Phones, Tablets and  
Cameras  
• Over & Under Output Voltage Protection  
• Cable Drop Compensation (None, 150 mV, 300 mV or  
450 mV option)  
• Wide Operation V ange (up to 28 V)  
CC R  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2016 − Rev. 3  
NCP1360/D  
1234567...29

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