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NCP1215ADR2 PDF预览

NCP1215ADR2

更新时间： 2024-11-29 04:37:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关控制器
页数 文件大小 规格书
16页 151K
描述
Low Cost Variable OFF Time Switched Mode Power Supply Controller

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中文翻译

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NCP1215ADR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.74模拟集成电路 - 其他类型：SWITCHING CONTROLLER
控制模式：CURRENT-MODE标称输入电压：12 V
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.9 mm湿度敏感等级：1
功能数量：1端子数量：8
最大输出电流：0.03 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235认证状态：Not Qualified
座面最大高度：1.75 mm子类别：Switching Regulator or Controllers
表面贴装：YES切换器配置：SINGLE
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

NCP1215ADR2 数据手册

 浏览型号NCP1215ADR2的Datasheet PDF文件第2页浏览型号NCP1215ADR2的Datasheet PDF文件第3页浏览型号NCP1215ADR2的Datasheet PDF文件第4页浏览型号NCP1215ADR2的Datasheet PDF文件第5页浏览型号NCP1215ADR2的Datasheet PDF文件第6页浏览型号NCP1215ADR2的Datasheet PDF文件第7页 
NCP1215A  
Low Cost Variable OFF  
Time Switched Mode Power  
Supply Controller  
The NCP1215A is a controller for low power off−line flyback  
Switched Mode Power Supplies (SMPS) featuring low size, weight  
and cost constraints together with a good low standby power  
performance. The operating principle uses switching frequency  
reduction at light load by increasing the OFF Time. Also, when OFF  
Time expands, the peak current is gradually reduced down to  
approximately 1/4 of the maximum peak current to prevent from  
exciting the transformer mechanical resonances. The risk of acoustic  
noise is thus greatly diminished while keeping good standby power  
performance.  
A low power internal supply block also ensures very low current  
consumption at startup without hampering the standby power  
performance.  
A special primary current sensing technique minimizes the impact  
of SMPS switching on control IC operation. The choice of peak  
voltage across the current sense resistor allows dissipation to be  
further reduced. The negative current sensing technique offers  
advantages over a traditional approach by avoiding the voltage drop  
incurred by traditional MOSFET source sensing. Thus, the IC drive  
capability is greatly improved.  
http://onsemi.com  
MARKING  
DIAGRAM  
8
SOIC−8  
D SUFFIX  
CASE 751  
1215A  
ALYW  
G
8
1
1
1
6
TSOP−6  
(SOT23−6, SC59−6)  
SN SUFFIX  
FACAYW G  
6
G
CASE 318G  
1
FAC  
A
L
Y
W
G
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
Finally, the bulk input ripple ensures a natural frequency dithering  
which smooths the EMI signature.  
= Pb−Free Package  
Features  
(Note: Microdot may be in either location)  
• Variable OFF Time Control Method  
• Very Low Current Consumption at Startup  
• Natural Frequency Dithering for Improved EMI Signature  
• Current Mode Control Operation  
PIN CONNECTIONS  
SOIC−8  
• Peak Current Compression Reduces Transformer Noise  
• Programmable Current Sense Resistor Peak Voltage  
• Undervoltage Lockout  
FB  
CT  
1
2
3
4
8
7
6
5
NC  
NC  
V
CS  
CC  
• Pb−Free Packages are Available  
GND  
Gate  
Typical Applications  
(Top View)  
• Auxiliary Power Supply  
• Standby Power Supply  
• AC−DC Adapter  
TSOP−6  
CS  
GND  
CT  
1
2
3
Gate  
6
5
4
• Off−line Battery Charger  
V
CC  
FB  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 2  
NCP1215A/D  
1234567...16

中文翻译

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NCP1215ADR2 替代型号

型号 品牌 替代类型 描述 数据表
NCP1380DDR2G ONSEMI

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