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NCES120P075T4 PDF预览

NCES120P075T4

更新时间: 2024-11-19 17:01:23
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
9页 821K
描述
????新洁能提供的650V和1200V碳化硅功率MOSFET产品,具有电流密度大、击穿电压高、损耗低等特点。同时,该系列产品具有优良的短路能力,为应用中的突发状况提供充足的裕量。广泛应用于新能源

NCES120P075T4 数据手册

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PbFree Product  
NCES120P075T4  
1200V, 36A, N-channel SiC power MOSFET  
General Description:  
NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low  
power consumption of applications. This product achieves industry-leading low  
on-resistance without sacrificing short-circuit withstand time. This is a 4-pin  
package type with a driver source terminal that can maximize the high-speed  
switching performance that is a feature of SiC MOSFETs.  
Features  
Low on-resistance  
Fast switching speed  
Fast reverse recovery  
Easy to parallel  
Schematic diagram  
Simple to drive  
Pb-free lead plating ; RoHS compliant  
Application  
Solar inverters  
DC/DC converters  
Switch mode power supplies  
Induction heating  
Motor drives  
TO-247-4L  
Package Marking and Ordering Information  
Device  
Device Package  
Device Marking  
NCES120P075T4  
TO-247-4L  
NCES120P075T4  
Absolute Maximum Ratings (TC=25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
1200  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
-4 to +21  
V
VGS  
Drain Current-Continuous (Note 1)  
36  
A
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current (Note 1)  
28  
90  
A
Maximum Power Dissipation  
146  
W
V
PD  
Recommended turn-on gate - source drive voltage  
Recommended turn-off gate - source drive voltage  
Virtual junction temperature  
+15 to +18  
0
VGS_on  
VGS_off  
Tvj  
V
175  
Operating Junction and Storage Temperature Range  
-40 To 175  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page  
V1.0  
1
http://www.ncepower.com  

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