Datasheet > NCEP8814AS

NCEP8814AS

更新时间： 2024-03-03 10:09:42

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	379K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCEP8814AS 数据手册

Pb Free Product

http://www.ncepower.com

NCEP8814AS

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP8814AS uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=88V,I_D=14A

R_DS(ON)=8.8mΩ (typical) @ V_GS=10V

R_DS(ON)=9.8mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Marking and pin assignment

● 100% UIS tested

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

12mm

Quantity

4000 units

NCEP8814AS

SOP-8

Ø330mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

V^GS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

3.5

℃

P_D

E_AS

230

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

41.7

℃/W

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6 7

下载PDF

与NCEP8814AS相关器件

型号	品牌	描述	获取价格	数据表
NCEP8818AS	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEPB302G	NCEPOWER	????新洁能提供N30V的半桥功率MOSFET产品，是通过将两个N型功率MOSEFT产品	获取价格
NCEPB303GU	NCEPOWER	????新洁能提供N30V的半桥功率MOSFET产品，是通过将两个N型功率MOSEFT产品	获取价格
NCES075R026T	NCEPOWER	????新洁能提供的650V和1200V碳化硅功率MOSFET产品，具有电流密度大、击穿电	获取价格
NCES075R026T4	NCEPOWER	????新洁能提供的650V和1200V碳化硅功率MOSFET产品，具有电流密度大、击穿电	获取价格
NCES120E032T4	NCEPOWER	????新洁能提供的650V和1200V碳化硅功率MOSFET产品，具有电流密度大、击穿电	获取价格