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NCEP85T25VD
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP85T25VD uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =85V,ID =250A
RDS(ON) <2.0mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
●Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-7L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP85T25VD
NCEP85T25VD
TO-263-7L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
85
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
250
180
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
1000
300
A
Maximum Power Dissipation
W
PD
Derating factor
2
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
2000
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.5
℃/W
Wuxi NCE Power Co., Ltd
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