Datasheet > NCEP60T18

NCEP60T18

更新时间： 2024-04-09 19:01:09

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	319K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP60T18 数据手册

http://www.ncepower.com

NCEP60T18

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP60T18 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=60V,I_D=180A

R_DS(ON)< 3.2mΩ @ V_GS=10V (Typ:2.8mΩ)

● Excellent gate charge x R_DS(on)product

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Marking and pin assignment

● 100% UIS tested

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

TO-220-3L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP60T18

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

180

126

I_D

I_D(100℃)

I_DM

720

Maximum Power Dissipation

220

P_D

Derating factor

1.47

W/℃

Single pulse avalanche energy ^{(Note 5)}

Drain Source voltage slope, VDS ≤48V,

Reverse diode dv/dt, VDS ≤48 V, ISD<ID

Operating Junction and Storage Temperature Range

E_AS

dv/dt

1036

V/ns

℃

dv/dt

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

V3.0

12 3 4 5 6 7

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与NCEP60T18相关器件

型号	品牌	描述	获取价格	数据表
NCEP60T18A	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEP60T18D	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEP60T20	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEP60T20A	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEP60T20D	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格
NCEP60T20LL	NCEPOWER	新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以	获取价格