Datasheet > NCEP60T12AD

NCEP60T12AD

更新时间： 2024-04-09 19:00:34

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	1113K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP60T12AD 数据手册

Pb Free Product

NCEP60T12AD

http://www.ncepower.com

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP60T12AD uses Super Trench technology that is

General Features

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

● V_DS=60V,I_D=120A

R_DS(ON)< 4.0mΩ @ V_GS=10V (Typ:3.5mΩ)

R_DS(ON)< 5.0mΩ @ V_GS=4.5V (Typ:4.0mΩ)

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

Application

● Pb-free lead plating

● DC/DC Converter

100% UIS TESTED!

100% ΔVds TESTED!

●Ideal for high-frequency switching and synchronous

rectification

TO-263

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP60T12AD

TO-263

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

120

100

480

180

1.2

I_D

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

500

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.83

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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