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NCEP60T12A
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP60T12A uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =60V,ID =120A
RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ)
RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
Marking and pin assignment
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP60T12A
NCEP60T12A
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
A
VDS
±20
VGS
Drain Current-Continuous (Silicon Limited)
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
120
100
ID
ID (100℃)
IDM
A
A
480
Maximum Power Dissipation
180
W
PD
Derating factor
1.2
W/℃
mJ
Single pulse avalanche energy (Note 5)
Drain Source voltage slope, VDS ≤48 V,
Reverse diode dv/dt, VDS ≤48 V, ISD<ID
Operating Junction and Storage Temperature Range
EAS
dv/dt
500
50
V/ns
V/ns
℃
15
dv/dt
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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