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NCEP6090GU PDF预览

NCEP6090GU

更新时间: 2024-11-19 17:01:39
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 337K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以技术水平和卓越的质量管理保证了出色的产品性能和可靠性,在降低系统设计难度的同时,提供了性价比。广泛应用于开

NCEP6090GU 数据手册

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http://www.ncepower.com  
NCEP6090GU  
NCE N-Channel Super Trench Power MOSFET  
Description  
The NCEP6090GU uses Super Trench technology that is  
General Features  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
VDS =60V,ID =90A  
RDS(ON)=2.9m(typical) @ VGS=10V  
switching power losses are minimized due to an extremely low Excellent gate charge x RDS(on) product(FOM)  
combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
Very low on-resistance RDS(on)  
150 °C operating temperature  
Pb-free lead plating  
Application  
DC/DC Converter  
Ideal for high-frequency switching and synchronous  
100% UIS TESTED!  
rectification  
100% Vds TESTED!  
DFN 5X6  
Top View  
Bottom View  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
P6090GU  
NCEP6090GU  
DFN5X6-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
±20  
V
VGS  
Drain Current-Continuous (Silicon Limited)  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
90  
63.6  
360  
100  
0.8  
A
A
ID  
ID (100)  
IDM  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
W/℃  
mJ  
EAS  
500  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
1.25  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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