Datasheet > NCEP6090AK

NCEP6090AK

更新时间： 2024-03-03 10:10:29

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	326K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP6090AK 数据手册

http://www.ncepower.com

NCEP6090AK

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP6090AK uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=60V,I_D=90A

R_DS(ON)< 8.0mΩ @ V_GS=10V (Typ:7.2mΩ)

R_DS(ON)< 9.5mΩ @ V_GS=4.5V (Typ:8.6mΩ)

● Excellent gate charge x R_DS(on)product

● Very low on-resistance R_DS(on)

● Pb-free lead plating

● 100% UIS tested

Marking and pin assignment

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

TO-252 -2Ltop view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP6090AK

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

63.6

I_D

I_D(100℃)

I_DM

360

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.68

W/℃

℃

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.76

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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