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NCEP6080G PDF预览

NCEP6080G

更新时间: 2024-04-09 19:00:24
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 412K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以技术水平和卓越的质量管理保证了出色的产品性能和可靠性,在降低系统设计难度的同时,提供了性价比。广泛应用于开

NCEP6080G 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCEP6080G  
NCE N-Channel Super Trench Power MOSFET  
Description  
The NCEP6080G uses Super Trench technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely  
low combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
Schematic diagram  
General Features  
VDS =60V,ID =80A  
RDS(ON) < 4.3m@ VGS=10V (Typ:3.8m)  
Excellent gate charge x RDS(on) product  
Very low on-resistance RDS(on)  
150 °C operating temperature  
Pb-free lead plating  
Marking and pin assignment  
100% UIS tested  
D
D
D
D
D
D
D
D
Application  
DC/DC Converter  
Ideal for high-frequency switching and synchronous  
rectification  
100% UIS TESTED!  
S
S
S
G
G
S
S
S
100% Vds TESTED!  
Top View  
Bottom View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP6080G  
NCEP6080G  
DFN5X6-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VDS  
±20  
VGS  
Drain Current-Continuous (Silicon Limited)  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
80  
58  
A
ID  
ID (100)  
IDM  
A
320  
85  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
0.68  
400  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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