Pb Free Product
http://www.ncepower.com
NCEP6080G
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP6080G uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =60V,ID =80A
RDS(ON) < 4.3mΩ @ VGS=10V (Typ:3.8mΩ)
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Marking and pin assignment
● 100% UIS tested
D
D
D
D
D
D
D
D
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
S
S
S
G
G
S
S
S
100% ∆Vds TESTED!
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP6080G
NCEP6080G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
±20
VGS
Drain Current-Continuous (Silicon Limited)
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
80
58
A
ID
ID (100℃)
IDM
A
320
85
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.68
400
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Wuxi NCE Power Co., Ltd
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