Datasheet > NCEP6060GU

NCEP6060GU

更新时间： 2024-04-09 18:59:10

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	688K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP6060GU 数据手册

http://www.ncepower.com

NCEP6060GU

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP6060GU uses Super Trench technology that is

General Features

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

● V_DS=60V,I_D=60A

R_DS(ON)=5.6mΩ (typical) @ V_GS=10V

switching power losses are minimized due to an extremely low ● Excellent gate charge x R_DS(on)product(FOM)

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

●

Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ΔVds TESTED!

DFN 5X6

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P6060GU

NCEP6060GU

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

42.4

170

I_D

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

0.56

320

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

R_θJA

1.78

℃/W

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

Wuxi NCE Power Co., Ltd

Page1

V3.0

12 3 4 5 6 7

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