Datasheet > NCEP6020AS

NCEP6020AS

更新时间： 2024-04-09 19:00:33

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	472K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP6020AS 数据手册

Pb Free Product

http://www.ncepower.com

NCEP6020AS

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP6020AS uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

● V_DS=60V,I_D=20A

Schematic diagram

R_DS(ON)=4.0mΩ (typical) @ V_GS=10V

R_DS(ON)=4.6mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Marking and pin assignment

● 100% UIS tested

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

2500 units

NCEP6020AS

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

±20

VGS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

130

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

3.5

℃

P_D

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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