http://www.ncepower.com
NCEP6015AS
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP6015AS uses Super Trench technology that is
General Features
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely low
combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
● VDS =60V,ID =15A
RDS(ON)=8.3mΩ (typical) @ VGS=10V
DS(ON)=9.7mΩ (typical) @ VGS=4.5V
R
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
100% UIS TESTED!
rectification
100% ∆Vds TESTED!
SOP-8
Top View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP6015AS
NCEP6015AS
SOP-8
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
15
10.5
60
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
A
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
3
W
mJ
V
PD
EAS
350
VDS Spike (Note 6)
10μs
72
Operating Junction and Storage Temperature Range
-55 To 150
41.7
℃
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
℃/W
Wuxi NCE Power Co., Ltd
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