Datasheet > NCEP50P80AK

NCEP50P80AK

更新时间： 2024-04-09 18:59:01

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	344K
描述
新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品。P沟道增强型功率MOSFET在降低系统设计复杂度上拥有天然的优势，独特的栅极负压开启机制，使得P沟道功率

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NCEP50P80AK 数据手册

http://www.ncepower.com

NCEP50P80AK

NCE P-Channel Super Trench Power MOSFET

Description

The NCEP50P80AK uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic Diagram

General Features

● V_DS=-50V,I_D=-80A

R_DS(ON)=7.6mΩ (typical) @ V_GS=-10V

R_DS(ON)=9.4mΩ (typical) @ V_GS=-4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Marking and pin assignment

● 100% UIS tested

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

TO-252 -2Ltop view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP50P80AK

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

-50

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

-80

-56

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

-300

Maximum Power Dissipation

140

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.93

W/℃

℃

E_AS

720

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.07

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6

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