Pb Free Product
http://www.ncepower.com
NCEP40T20AGU
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP40T20AGU uses Super Trench technology that
General Features
is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely low
combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
● VDS =40V,ID =200A
RDS(ON)=0.95mΩ , typical @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ΔVds TESTED!
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P40T20AGU
NCEP40T20AGU
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
V
VGS
Drain Current-Continuous (Silicon Limited)
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current (Package Limited)
Maximum Power Dissipation
200
A
ID
ID (100℃)
IDM
150
A
800
A
180
W
PD
Derating factor
1.44
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
1800
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.67
℃/W
Wuxi NCE Power Co., Ltd
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