Datasheet > NCEP40T17G

NCEP40T17G

更新时间： 2024-04-09 19:00:47

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
6页	363K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP40T17G 数据手册

Pb Free Product

http://www.ncepower.com

NCEP40T17G

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP40T17G uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

● V_DS=40V,I_D=170A

Schematic Diagram

R_DS(ON)=1.25mΩ (typical) @ V_GS=10V

R_DS(ON)=1.55mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Top View

Bottom View

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

100% UIS TESTED!

rectification

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP40T17G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current (Package Limited)

Maximum Power Dissipation

170

120

I_D

I_D(100℃)

I_DM

400

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.76

W/℃

℃

E_AS

1200

-55 To 150

Operating Junction and Storage Temperature Range

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6

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