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NCEP40T17AD

更新时间: 2024-04-09 18:59:52
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 1132K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以技术水平和卓越的质量管理保证了出色的产品性能和可靠性,在降低系统设计难度的同时,提供了性价比。广泛应用于开

NCEP40T17AD 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCEP40T17AD  
NCE N-Channel Super Trench Power MOSFET  
Description  
The NCEP40T17AD uses Super Trench technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely  
low combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
Schematic Diagram  
General Features  
VDS =40V,ID =170A  
RDS(ON)=1.4mΩ (typical) @ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
100% UIS tested  
TO-263-2L top view  
Application  
DC/DC Converter  
100% UIS TESTED!  
100% ΔVds TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP40T17AD  
NCEP40T17AD  
TO-263-2L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
40  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
±20  
V
VGS  
170  
120  
A
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
680  
A
Maximum Power Dissipation  
250  
W
PD  
Derating factor  
1.66  
1200  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
0.6  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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