Datasheet > NCEP40T15GU

NCEP40T15GU

更新时间： 2024-05-07 20:39:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	1008K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP40T15GU 数据手册

NCEP40T15GU

http://www.ncepower.com

NCE N-Channel Super Trench Power MOSFET

General Features

Description

● V_DS=40V,I_D=150A

The NCEP40T15GU uses Super Trench technology that is uniquely

optimized to provide the most efficient high frequency switching

performance. Both conduction and switching power losses are

minimized due to an extremely low combination of R_DS(ON)and Q_g. This

device is ideal for high-frequency switching and synchronous

rectification

R_DS(ON)=1.09mΩ , typical@ V_GS=10V

R_DS(ON)=1.5mΩ , typical@ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150°C operating temperature

● Pb-free lead plating

Application

● 100% UIS tested

● DC/DC Converter

● 100% ΔVds tested

● Ideal for high-frequency switching and synchronous rectification

DFN5X6-8L

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P40T15GU

NCEP40T15GU

DFN5X6-8L

Ø330mm

12mm

5000units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

150

106

600

135

1.1

I_D

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

1500

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.93

℃/W

Wuxi NCE Power Co., Ltd

Page1

V8.1

12 3 4 5 6 7

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