Datasheet > NCEP40PT30VD

NCEP40PT30VD

更新时间： 2024-03-03 10:10:22

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	688K
描述
新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品。P沟道增强型功率MOSFET在降低系统设计复杂度上拥有天然的优势，独特的栅极负压开启机制，使得P沟道功率

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NCEP40PT30VD 数据手册

http://www.ncepower.com

NCEP40PT30VD

NCE P-Channel Super Trench Power MOSFET

Description

General Features

The NCEP40PT30VD uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

● V_DS=-40V,I_D=-300A

R_DS(ON)=1.6mΩ , typical@ V_GS=-10V

R_DS(ON)=2.2mΩ , typical@ V_GS=-4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Application

● 100% UIS tested

● DC/DC Converter

● 100% ΔVds tested

●Ideal for high-frequency switching and synchronous

rectification

TO-263-7L

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP40PT30VD

TO-263-7L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

-40

±20

VGS

-300

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

-210

-1200

390

Maximum Power Dissipation

P_D

Derating factor

2.63

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

2400

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.38

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6

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