NCEP40PT15G PDF预览

NCEP40PT15G

更新时间: 2025-07-19 15:18:55
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
6页 542K
描述
新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品。P沟道增强型功率MOSFET在降低系统设计复杂度上拥有天然的优势,独特的栅极负压开启机制,使得P沟道功率

NCEP40PT15G 数据手册

 浏览型号NCEP40PT15G的Datasheet PDF文件第2页浏览型号NCEP40PT15G的Datasheet PDF文件第3页浏览型号NCEP40PT15G的Datasheet PDF文件第4页浏览型号NCEP40PT15G的Datasheet PDF文件第5页浏览型号NCEP40PT15G的Datasheet PDF文件第6页 
http://www.ncepower.com  
NCEP40PT15G  
NCE P-Channel Super Trench Power MOSFET  
Description  
General Features  
The NCEP40PT15G uses Super Trench technology that is  
uniquely optimized to provide the most efficient high frequency  
switching performance. Both conduction and switching power  
losses are minimized due to an extremely low combination of  
RDS(ON) and Qg. This device is ideal for high-frequency switching  
and synchronous rectification.  
● VDS =-40V,ID =-150A  
RDS(ON)=2.8mΩ (typical) @ VGS=-10V  
RDS(ON)=3.8mΩ (typical) @ VGS=-4.5V  
● Excellent gate charge x RDS(on) product(FOM)  
● Very low on-resistance RDS(on)  
● 150 °C operating temperature  
● Pb-free lead plating  
Application  
● 100% UIS tested  
DC/DC Converter  
100% UIS TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
100% ΔVds TESTED!  
DFN 5X6  
Schematic Diagram  
Top View  
Bottom View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP40PT15G  
NCEP40PT15G  
DFN5X6-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-40  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
±20  
VGS  
Drain Current-Continuous (TC=25)  
Drain Current-Continuous(TC=100)  
Drain Current-Continuous (TA=25)  
Pulsed Drain Current (Note 1)  
-150  
-106  
-20.5  
-600  
150  
A
ID (TC=25)  
ID (TC=100)  
ID (TA=25)  
IDM  
A
A
A
Maximum Power Dissipation(TC=25)  
Maximum Power Dissipation(TA=25)  
Derating factor  
W
W
W/℃  
mJ  
PD(TC=25)  
PD(TA=25)  
2.5  
1.2  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
1076  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
RθJA  
0.83  
50  
/W  
/W  
Thermal Resistance,Junction-to-Ambient(Note 2)  
Wuxi NCE Power Co., Ltd  
Page1  
V3.0  

与NCEP40PT15G相关器件

型号 品牌 获取价格 描述 数据表
NCEP40PT30VD NCEPOWER

获取价格

新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品
NCEP40T11 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T11A NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T11AG NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T11AK NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T11G NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T11K NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T12AGU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T12GU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP40T13AGU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以