Datasheet > NCEP40P80G

NCEP40P80G

更新时间： 2024-03-03 10:09:40

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	335K
描述
新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品。P沟道增强型功率MOSFET在降低系统设计复杂度上拥有天然的优势，独特的栅极负压开启机制，使得P沟道功率

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NCEP40P80G 数据手册

http://www.ncepower.com

NCEP40P80G

NCE P-Channel Super Trench Power MOSFET

Description

General Features

The NCEP40P80G uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

● V_DS=-40V,I_D=-80A

R_DS(ON)=6.3mΩ (typical) @ V_GS=-10V

_DS(ON)=9.0mΩ (typical) @ V_GS=-4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

100% UIS TESTED!

rectification

100% ∆Vds TESTED!

DFN 5X6

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP40P80G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

-80

-56

I_D(T_C=25℃)

I_D(T_C=100℃)

I_D(T_A=25℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Drain Current-Continuous (T_A=25℃)

Pulsed Drain Current

-12.8

-320

Maximum Power Dissipation(T_C=25℃)

Maximum Power Dissipation(T_A=25℃)

Pulsed Drain Current

P_D(T_C=25℃)

P_D(T_A=25℃)

I_DM

2.3

-320

0.6

Derating factor

Single pulse avalanche energy ^{(Note 3)}

W/℃

℃

E_AS

500

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6

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