Datasheet > NCEP40P65GU

NCEP40P65GU

更新时间： 2024-04-09 19:03:13

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	826K
描述
新洁能提供击穿电压等级范围为-30V至-100V的P沟道SGT-I系列功率MOSFET产品。P沟道增强型功率MOSFET在降低系统设计复杂度上拥有天然的优势，独特的栅极负压开启机制，使得P沟道功率

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NCEP40P65GU 数据手册

http://www.ncepower.com

NCEP40P65GU

NCE P-Channel Super Trench Power MOSFET

Description

General Features

● V_DS=-40V,I_D=-65A

The NCEP40P65GU uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification

R_DS(ON)=7.8mΩ (typical) @ V_GS=-10V

R_DS(ON)=11.5mΩ (typical) @ V_GS=-4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

100% UIS TESTED!

●

Ideal for high-frequency switching and synchronous

rectification

100% ΔVds TESTED!

DFN 5X6

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P40P65GU

NCEP40P65GU

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

-65

-46

I_D(T_C=25℃)

I_D(T_C=100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

-260

Maximum Power Dissipation(T_C=25℃)

Pulsed Drain Current

P_D(T_C=25℃)

I_DM

-260

0.68

423

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

1.47

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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